TY - JOUR
T1 - Hybrid Spin-CMOS polymorphic logic gate with application in in-memory computing
AU - Angizi, Shaahin
AU - He, Zhezhi
AU - Chen, An
AU - Fan, Deliang
N1 - Funding Information:
VIII. ACKNOWLEDGMENT This work was supported in part by the National Science Foundation under Grant 1740126 and Grant 1908495 and in part by Semiconductor Research Corporation nCORE under Grant 1740126 and Grant 1908495.
Publisher Copyright:
© 1965-2012 IEEE.
PY - 2020/2
Y1 - 2020/2
N2 - In this article, we initially present a hybrid spin-CMOS polymorphic logic gate (HPLG) using a novel 5-terminal magnetic domain wall motion device. The proposed HPLG is able to perform a full set of 1- and 2-input Boolean logic functions (i.e., NOT, AND/NAND, OR/NOR, and XOR/XNOR) by configuring the applied keys. We further show that our proposed HPLG could become a promising hardware security primitive to address IC counterfeiting or reverse engineering by logic locking and polymorphic transformation. The experimental results on a set of ISCAS-89, ITC-99, and École Polytechnique Fédérale de Lausanne (EPFL) benchmarks show that HPLG obtains up to 51.4% and 10% average performance improvements on the power-delay product (PDP) compared with recent non-volatile logic and CMOS-based designs, respectively. We then leverage this gate to realize a novel processing-in-memory architecture (HPLG-PIM) for highly flexible, efficient, and secure logic computation. Instead of integrating complex logic units in cost-sensitive memory, this architecture exploits a hardware-friendly approach to implement the complex logic functions between multiple operands combining a reconfigurable sense amplifier and an HPLG unit to reduce the latency and the power-hungry data movement further. The device-to-architecture co-simulation results for widely used graph processing tasks running on three social network data sets indicate roughly 3.6 × higher energy efficiency and 5.3 × speedup over recent resistive RAM (ReRAM) accelerators. In addition, an HPLG-PIM achieves ~4 × higher energy efficiency and 5.1× speedup over recent processing-in-DRAM acceleration methods.
AB - In this article, we initially present a hybrid spin-CMOS polymorphic logic gate (HPLG) using a novel 5-terminal magnetic domain wall motion device. The proposed HPLG is able to perform a full set of 1- and 2-input Boolean logic functions (i.e., NOT, AND/NAND, OR/NOR, and XOR/XNOR) by configuring the applied keys. We further show that our proposed HPLG could become a promising hardware security primitive to address IC counterfeiting or reverse engineering by logic locking and polymorphic transformation. The experimental results on a set of ISCAS-89, ITC-99, and École Polytechnique Fédérale de Lausanne (EPFL) benchmarks show that HPLG obtains up to 51.4% and 10% average performance improvements on the power-delay product (PDP) compared with recent non-volatile logic and CMOS-based designs, respectively. We then leverage this gate to realize a novel processing-in-memory architecture (HPLG-PIM) for highly flexible, efficient, and secure logic computation. Instead of integrating complex logic units in cost-sensitive memory, this architecture exploits a hardware-friendly approach to implement the complex logic functions between multiple operands combining a reconfigurable sense amplifier and an HPLG unit to reduce the latency and the power-hungry data movement further. The device-to-architecture co-simulation results for widely used graph processing tasks running on three social network data sets indicate roughly 3.6 × higher energy efficiency and 5.3 × speedup over recent resistive RAM (ReRAM) accelerators. In addition, an HPLG-PIM achieves ~4 × higher energy efficiency and 5.1× speedup over recent processing-in-DRAM acceleration methods.
KW - Domain wall motion (DWM)
KW - in-memory computing
KW - polymorphic gate
KW - spintronics
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U2 - 10.1109/TMAG.2019.2955626
DO - 10.1109/TMAG.2019.2955626
M3 - Article
AN - SCOPUS:85078484453
SN - 0018-9464
VL - 56
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 2
M1 - 8956045
ER -