A radiation-hard, compact, low-mass, hybrid GaN and CMOS integrated module DC-DC converter has been designed with an input voltage of up to 14V regulated down to an output voltage of 1.5V, with 6A maximum load current. The converter exhibits greater than 70% efficiency. Discrete GaN transistors are used for the power stage, and the controller circuitry and power device drivers are integrated on a 0.35um CMOS chip. Radiation hardening by design (RHBD) techniques have been employed to meet TID levels greater than 150 megarad (Si). This work presents the design and successful measurement results of the custom-designed CMOS driver/controller integrated circuit (IC) and the entire DC-DC converter module that uses this IC. The next version of the controller/driver IC has been sent to fabrication in the fall 2018 and it is expected to provide 18V to 1.5V conversion with >75% efficiency.
|Original language||English (US)|
|Journal||Proceedings of Science|
|State||Published - 2018|
|Event||2018 Topical Workshop on Electronics for Particle Physics, TWEPP 2018 - Antwerp, Belgium|
Duration: Sep 17 2018 → Sep 21 2018
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