The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) of the carriers impinging on the hetero-interface. The high field region at the interface results in a strongly non-Maxwellian distribution of holes incident on the surface, which has implications for current collection and a significant impact on the overall efficiency of the device. This work studies the effect of the high field transport on photogenerated carriers at the hetero-interface through a combination of Monte Carlo simulations and analysis of defect assisted transport. A three band warped non-parabolic band model is implemented to describe the valence band in order to accurately represent high energy photocarriers. Also, percolation path theory is applied to study defect assisted transport in the intrinsic amorphous region by considering mechanisms such as defect capture through tunneling, emission through Poole - Frenkel effect, and emission through tunneling.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781479943982
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014


Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States


  • Amorphous Semiconductors
  • Heterojunctions
  • Numerical Simulation
  • Silicon Devices
  • Solar Energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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