TY - JOUR
T1 - Highly textured Pb(Zr0.3Ti0.7)O3 thin films on GaN/sapphire by metalorganic chemical vapor deposition
AU - Dey, Sandwip
AU - Cao, W.
AU - Bhaskar, S.
AU - Li, Jian
N1 - Funding Information:
The authors wish to acknowledge the support of the Defense Advanced Research Projects Agency (DARPA Contract No. 1236318-004) and members of the DARPA-sponsored consortium on RF MEMS devices: T. George, K. Son, and B.J. Cheng of the MEMS Group at Jet Propulsion Lab, Pasadena, CA; D.P. Weitekamp and B. Lambert of California Institute of Technology, Pasadena, CA; R. Fathauer of Arizona State University and Jet Propulsion Laboratory; S. Kiaei of Arizona State University; M.A. Khan, G. Simin, and J. Yang of University of South Carolina. We thank Mitsubishi Materials Corporation, Tokyo, Japan, and Kojundo Chemical Laboratory Co., Ltd., Saitama Pref., Japan for providing precursor chemicals, and Dr. Thomas Groy and Barry Wilkens for XRD and RBS analyses, respectively, at Arizona State University.
PY - 2006/6
Y1 - 2006/6
N2 - Highly (111) textured Pb(Zr0.3Ti0.7)O3 (PZT 30/70) films were deposited on (0001) GaN/sapphire substrates using liquid-source metalorganic chemical vapor deposition (MOCVD) technique at 520 °C and 80 nm/min. The crystallinity of as-deposited PZT films and the structure of PZT/GaN interface were evaluated by x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), respectively. Mitigated by geometric epitaxy and strain energy minimization, the orientation relationships of PZT on epi-GaN, determined using x-ray pole figure and selected area diffraction pattern, were as follows: out-of-plane alignment of [111] PZT//[0001] GaN, and orthogonal in-plane alignments of [112] PZT//[1100] GaN (zone axes) and [110] PZT//[1120] GaN. The nanochemistry of the PZT (150nm)/GaN interface, studied using analytical TEM, indicated a chemically sharp interface with interdiffusion limited to a region below 5 nm. The properties of as-deposited PZT on GaN by MOCVD are briefly compared with PZT by sol-gel processing, radio-frequency sputtering, and pulsed laser deposition.
AB - Highly (111) textured Pb(Zr0.3Ti0.7)O3 (PZT 30/70) films were deposited on (0001) GaN/sapphire substrates using liquid-source metalorganic chemical vapor deposition (MOCVD) technique at 520 °C and 80 nm/min. The crystallinity of as-deposited PZT films and the structure of PZT/GaN interface were evaluated by x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), respectively. Mitigated by geometric epitaxy and strain energy minimization, the orientation relationships of PZT on epi-GaN, determined using x-ray pole figure and selected area diffraction pattern, were as follows: out-of-plane alignment of [111] PZT//[0001] GaN, and orthogonal in-plane alignments of [112] PZT//[1100] GaN (zone axes) and [110] PZT//[1120] GaN. The nanochemistry of the PZT (150nm)/GaN interface, studied using analytical TEM, indicated a chemically sharp interface with interdiffusion limited to a region below 5 nm. The properties of as-deposited PZT on GaN by MOCVD are briefly compared with PZT by sol-gel processing, radio-frequency sputtering, and pulsed laser deposition.
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U2 - 10.1557/jmr.2006.0184
DO - 10.1557/jmr.2006.0184
M3 - Article
AN - SCOPUS:33745985737
SN - 0884-2914
VL - 21
SP - 1526
EP - 1531
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 6
ER -