Abstract
Low-temperature heteroepitaxy (330 {ring operator}C-430 {ring operator}C) of Si0.5Ge0.5 and Si0.25Ge0.75 on Si(100) using single-source silyl-germanes [ SiH3GeH3,HSi(GeH3)3] produces monocrystalline structures, smooth and continuous surface morphologies and low defect densities. The metastable compressive strain in these films is dramatically enhanced relative to alternative growth methods. At such low temperatures the material grows seamlessly, conformally, and selectively in the "source/drain" regions of prototypical transistors. These results suggest that films grown via silyl-germanes could have applications in optoelectronics and as stressors for mobility enhancement in Si devices.
Original language | English (US) |
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Pages (from-to) | 78-81 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 149 |
Issue number | 1-2 |
DOIs | |
State | Published - Jan 2009 |
Keywords
- A. Group-IV semiconductors
- B. Epitaxy
- C. Strain
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry