Highly oriented diamond films on Si: growth, characterization, and devices

Brian R. Stoner, D. M. Malta, A. J. Tessmer, J. Holmes, David L. Dreifus, R. C. Glass, A. Sowers, Robert J. Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMike A. Tamor, Mohammad Aslam
Number of pages12
StatePublished - 1994
Externally publishedYes
EventDiamond-Film Semiconductors - Los Angeles, CA, USA
Duration: Jan 27 1994Jan 28 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherDiamond-Film Semiconductors
CityLos Angeles, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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