Highly efficient gas molecule-tunable few-layer GaSe phototransistors

Shengxue Yang, Qu Yue, Hui Cai, Kedi Wu, Chengbao Jiang, Sefaattin Tongay

Research output: Contribution to journalArticlepeer-review

52 Scopus citations


Herein we present a systematic study on the effects of different gas molecules on the photoelectric response of few-layer GaSe phototransistors before and after introducing defects. After introducing defects by thermal annealing, the phototransistors become largely photo-responsive (18.75 A W-1) with high external quantum efficiency (EQE) (∼91.53%), high photocurrent on-off ratio, fast photo-response, and good stability in an O2 rich environment when illuminated by 254 nm ultraviolet light.

Original languageEnglish (US)
Pages (from-to)248-253
Number of pages6
JournalJournal of Materials Chemistry C
Issue number2
StatePublished - 2016

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry


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