Several II-VI compound semiconductors have been observed with a 500kv high resolution electron microscope. The lattice defects occurring in ZnTe and ZnSe are described and compared with those found in CdTe.
|Original language||English (US)|
|Title of host publication||Lawrence Berkeley Laboratory (Report) LBL|
|Editors||R.M. Fisher, R. Gronsky, K.H. Westmacott|
|Number of pages||4|
|State||Published - 1983|
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