Abstract
Several II-VI compound semiconductors have been observed with a 500kv high resolution electron microscope. The lattice defects occurring in ZnTe and ZnSe are described and compared with those found in CdTe.
Original language | English (US) |
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Title of host publication | Lawrence Berkeley Laboratory (Report) LBL |
Editors | R.M. Fisher, R. Gronsky, K.H. Westmacott |
Pages | 31-34 |
Number of pages | 4 |
State | Published - 1983 |
Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)