High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells

Richard King, P. C. Colter, D. E. Joslin, K. M. Edmondson, D. D. Krut, N. H. Karam, Sarah Kurtz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Scopus citations


Four-junction GaInP/GaAs/GaInNAs/Ge solar cells are a widely-pursued route toward AMO efficiencies of 35% and above, and terrestrial efficiencies of up to 40%. Extensive research into the new material system of GaInNAs has so far yielded subcells with AMO current densities far below the ∼17 mA/cm2 needed to current match the other subcells in the stack. A new multijunction structure, a 5-junction GaInP/GaInP/GaAs/GaInNAs/Ge cell, divides the solar spectrum more finely in order to relax this current matching requirement, by using an optically thin, high-bandgap Gainp top subcell, with an additional thick, low-bandgap Gainp subcell beneath it, in combination with a GaInNAs subcell. In this way, the 5-junction cell design allows the practical use of GaInNAs subcells to increase the efficiency of multijunction cells. Light I-V and external quantum efficiency measurements of the component subcells of such 5-junction cells are discussed. Experimental results are presented for the first time on GaInP/GaInP/GaAs/GaInNAs/Ge cells with the top four junctions active, with measured Voc of 3.90 V.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Number of pages4
StatePublished - 2002
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: May 19 2002May 24 2002


Other29th IEEE Photovoltaic Specialists Conference
Country/TerritoryUnited States
CityNew Orleans, LA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics


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