High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates

Maitreya Dutta, Franz A.M. Koeck, Wenwen Li, Robert Nemanich, Srabanti Chowdhury

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


We present a comparative study of PIN structures in diamond on type IIa (100)-A nd type IIb (111)-oriented bulk diamond substrates. An 8.5-μm thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm2 with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).

Original languageEnglish (US)
Article number7875438
Pages (from-to)600-603
Number of pages4
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 2017


  • Diamond
  • p-i-n diodes
  • power semiconductor devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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