High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond

T. P. Humphreys; J. V. Labrasca; R. J. Nemanich; K. Das; J. B. Posthill

doi:10.1143/JJAP.30.L1409

High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond

T. P. Humphreys, J. V. Labrasca, R. J. Nemanich, K. Das, J. B. Posthill

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.

Original language	English (US)
Pages (from-to)	L1409-L1411
Journal	Japanese Journal of Applied Physics
Volume	30
Issue number	8
DOIs	https://doi.org/10.1143/JJAP.30.L1409
State	Published - Aug 1991
Externally published	Yes

Keywords

Heteroepitaxy
High-temperature rectifying contacts
Nickel/diamond interface
Semiconducting diamond

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.30.L1409

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@article{b89e531b00a0460183524b5e5041579d,

title = "High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond",

abstract = "The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.",

keywords = "Heteroepitaxy, High-temperature rectifying contacts, Nickel/diamond interface, Semiconducting diamond",

author = "Humphreys, {T. P.} and Labrasca, {J. V.} and Nemanich, {R. J.} and K. Das and Posthill, {J. B.}",

year = "1991",

month = aug,

doi = "10.1143/JJAP.30.L1409",

language = "English (US)",

volume = "30",

pages = "L1409--L1411",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8",

}

TY - JOUR

T1 - High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond

AU - Humphreys, T. P.

AU - Labrasca, J. V.

AU - Nemanich, R. J.

AU - Das, K.

AU - Posthill, J. B.

PY - 1991/8

Y1 - 1991/8

N2 - The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.

AB - The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.

KW - Heteroepitaxy

KW - High-temperature rectifying contacts

KW - Nickel/diamond interface

KW - Semiconducting diamond

UR - http://www.scopus.com/inward/record.url?scp=0026206107&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026206107&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.L1409

DO - 10.1143/JJAP.30.L1409

M3 - Article

AN - SCOPUS:0026206107

SN - 0021-4922

VL - 30

SP - L1409-L1411

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8

ER -

High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond

Abstract

Keywords

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