@inproceedings{c6ba5a9d65b7475fa078539428b24f51,
title = "HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON.",
abstract = "Two new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substitutional fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects.",
author = "Pennycook, {S. J.} and J. Narayan and Culbertson, {R. J.} and E. Fogarassy",
year = "1985",
month = dec,
day = "1",
language = "English (US)",
isbn = "0931837065",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "287--294",
editor = "J.B. Roberto and R.W. Carpenter and M.C. Wittels",
booktitle = "Materials Research Society Symposia Proceedings",
}