High performance ZnO nanowire FET with ITO contacts

Matthew A. Hollister, John D. Le, Guanghua Xiao, Xuekun Lu, Richard A. Kiehl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.

Original languageEnglish (US)
Title of host publication65th DRC Device Research Conference
Number of pages2
StatePublished - Dec 1 2007
Externally publishedYes
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007Jun 20 2007

Publication series

Name65th DRC Device Research Conference


Other65th DRC Device Research Conference
CitySouth Bend

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering


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