Abstract
This letter presents transistor device results on ultrathin AlN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80- and 180-nm T-gates are compared, which demonstrate drain-induced off -state gate leakage currents below 10-6 A/mm and extrinsic transconductance gm ∼ 500}\ mS/mm} by utilizing a ∼2-3 nm amorphous oxide layer formed under the T-gate during processing. In addition, excellent dc results such as RC < 0.50} mm} and pulsed IDSmax ∼ 1.75}\ A/mm} are reported. Small-signal RF performance using an 80-nm T-gate achieved ft>100 GHz} operation, which is among the best so far reported for AlN/GaN technology.
Original language | English (US) |
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Article number | 6032708 |
Pages (from-to) | 1677-1679 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2011 |
Keywords
- Aluminum nitride
- High-electron-mobility transistor (HEMT)
- Lattice strain
- Low gate leakage
- Sapphire substrate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering