Abstract
The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above 107 cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2×107 cm/sec.
Original language | English (US) |
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Pages (from-to) | 2361-2369 |
Number of pages | 9 |
Journal | Physical Review B |
Volume | 12 |
Issue number | 6 |
DOIs | |
State | Published - Jan 1 1975 |
ASJC Scopus subject areas
- Condensed Matter Physics