High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

C. M. Fetzer, R. R. King, P. C. Colter, K. M. Edmondson, D. C. Law, A. P. Stavrides, H. Yoon, J. H. Ermer, M. J. Romero, N. H. Karam

Research output: Contribution to journalConference articlepeer-review

46 Scopus citations


This paper focuses on the metal-organic vapor-phase epitaxy growth of 3-junction (3J) solar cells where the epitaxial Ga0.44In 0.56P top and Ga0.92In0.08As middle subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 8% and 12%-In, GaInAs are grown on 100 mm dia. (001) Ge substrates and evaluated in comparison to approximately lattice-matched GaAs and Ga 0.99In0.01As subcells. Layers are observed to be nearly 100% relaxed by high-resolution X-ray diffraction. Threading dislocation densities of ∼2 × 105cm-2 in the 8%-In layers are observed by electron beam induced current and cathodoluminescence. Single-junction devices show a constant offset between open-circuit voltage and bandgap of ∼380 mV. Building upon these results, 3J metamorphic Ga 0.44In0.56P/Ga0.92In0.08As/Ge solar cells are fabricated. Very high performances of small area devices are reported with 28.8% efficiency under the AM0 spectrum and 31.3% efficiency under the AM1.5G 1-sun terrestrial spectrum.

Original languageEnglish (US)
Pages (from-to)341-348
Number of pages8
JournalJournal of Crystal Growth
Issue number2-3
StatePublished - Jan 19 2004
Externally publishedYes
EventProceedings of the 11th Biennia, (US) Workshop on Organometall - Keystone, CO, United States
Duration: Jul 20 2003Jul 24 2003


  • A1. Metamorphic
  • A3. Metalorganic vapor phase epitaxy
  • B1. GaInAs
  • B1. GaInP
  • B1. Germanium
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE'. Together they form a unique fingerprint.

Cite this