High efficiency graphene solar cells by chemical doping

Xiaochang Miao, Sefaattin Tongay, Maureen K. Petterson, Kara Berke, Andrew G. Rinzler, Bill R. Appleton, Arthur F. Hebard

Research output: Contribution to journalArticlepeer-review

870 Scopus citations


We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native (undoped) device performance by a factor of 4.5 and is the highest PCE reported for graphene-based solar cells to date. Current-voltage, capacitance-voltage, and external quantum efficiency measurements show the enhancement to be due to the doping-induced shift in the graphene chemical potential that increases the graphene carrier density (decreasing the cell series resistance) and increases the cell's built-in potential (increasing the open circuit voltage) both of which improve the solar cell fill factor.

Original languageEnglish (US)
Pages (from-to)2745-2750
Number of pages6
JournalNano Letters
Issue number6
StatePublished - Jun 13 2012
Externally publishedYes


  • Schottky junctions
  • capacitance-voltage
  • chemical doping of graphene
  • current-voltage
  • external quantum efficiency
  • graphene/n-Si solar cells

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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