High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

Xiaodong Yan; Ivan S. Esqueda; Jiahui Ma; Jesse Tice; Han Wang

doi:10.1063/1.5002138

High breakdown electric field in β-Ga₂O₃/graphene vertical barristor heterostructure

Xiaodong Yan, Ivan S. Esqueda, Jiahui Ma, Jesse Tice, Han Wang

Research output: Contribution to journal › Article › peer-review

115 Scopus citations

Abstract

In this work, we study the high critical breakdown field in β-Ga₂O₃ perpendicular to its (100) crystal plane using a β-Ga₂O₃/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga₂O₃ field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

Original language	English (US)
Article number	032101
Journal	Applied Physics Letters
Volume	112
Issue number	3
DOIs	https://doi.org/10.1063/1.5002138
State	Published - Jan 15 2018
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5002138

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@article{9da0d4399b984f84aa34bc99f5babd17,

title = "High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure",

abstract = "In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.",

author = "Xiaodong Yan and Esqueda, {Ivan S.} and Jiahui Ma and Jesse Tice and Han Wang",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = jan,

day = "15",

doi = "10.1063/1.5002138",

language = "English (US)",

volume = "112",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

AU - Yan, Xiaodong

AU - Esqueda, Ivan S.

AU - Ma, Jiahui

AU - Tice, Jesse

AU - Wang, Han

PY - 2018/1/15

Y1 - 2018/1/15

N2 - In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

AB - In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

UR - http://www.scopus.com/inward/record.url?scp=85040737876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040737876&partnerID=8YFLogxK

U2 - 10.1063/1.5002138

DO - 10.1063/1.5002138

M3 - Article

AN - SCOPUS:85040737876

SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032101

ER -

High breakdown electric field in β-Ga₂O₃/graphene vertical barristor heterostructure

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