TY - JOUR
T1 - Heterovalent semiconductor structures and devices grown by molecular beam epitaxy
AU - Zhang, Yong Hang
AU - Smith, David J.
N1 - Funding Information:
Much of the work described here was carried out by our students, postdocs, and collaborators at ASU and other institutions: J. J. Becker, C. M. Campbell, O. O. Cellek, W. H. G. Dettlaff, M. J. DiNezza, D. Ding, Z.-Y. He, Y. Kuo, M. Lassise, J. Lu, S. H. Lim, Z.-Y. Lin, S. Liu, D. Mohanty, R. J. Nemanich, E. Steenbergen, E. Suarez, B. D. Tracy, S. Wang, X. Wang, Y. Zhao, X.-B. Zhang, X.-H. Zhao et al. at ASU; X. Liu and J. K. Furdyna at Notre Dame; E. Luna and A. Trampert at Paul-Drüde Institut (Berlin); and I. Bhat and his group at RPI. The work at ASU was partially supported by a Science Foundation Arizona grant (No. SRG 0339-08) and two AFOSR grants (Nos. FA9550-10-1-0129 and FA9550-15-1-0196), an ARO MURI grant (No. W911NF-10-1-0524) and two STIR programs (Nos. W911NF1910277 and W911NF2010225), DOE EERE BAPVC programs (No. DE-EE000494), DOE EERE PVRD program (No. DE-EE0007552), and NSF/DOE QESST program (NSF CA No. EEC-1041895). The team at Notre Dame was also jointly supported by an NSF grant (No. ECCS-1002072), and the team at RPI was also supported by the BAPVC program (No. DE-EE000494). The authors gratefully acknowledge the use of the facilities at the John M. Cowley Center for High Resolution Electron Microscopy, the Center for Solid State Electronics Research (ASU NanoFab), and the Eyring Materials Center at Arizona State University.
Publisher Copyright:
© 2021 Author(s).
PY - 2021/5/1
Y1 - 2021/5/1
N2 - Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a ∼0.13%), CdTe/InSb (Δa/a ∼0.05%), and ZnSe/GaAs (Δa/a ∼0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (∼1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/MgxCd1-xTe double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.
AB - Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a ∼0.13%), CdTe/InSb (Δa/a ∼0.05%), and ZnSe/GaAs (Δa/a ∼0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (∼1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/MgxCd1-xTe double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.
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U2 - 10.1116/6.0000802
DO - 10.1116/6.0000802
M3 - Review article
AN - SCOPUS:85103775264
SN - 0734-2101
VL - 39
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 3
M1 - 030803
ER -