Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts

Engineering & Materials Science

• Ohmic contacts 100%
• Heterojunctions 86%
• Bipolar transistors 40%
• Silicon nitride 40%
• Transconductance 39%
• High electron mobility transistors 38%
• Refractory materials 36%
• Tungsten 35%
• Zinc 35%

Chemical Compounds

• Current Gain 58%
• Transconductance 50%
• Diffusion 40%
• Refractory 34%
• Field Effect 32%
• Nitride 31%
• Tungsten 30%
• Length 19%
• Liquid Film 15%