Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition

Z. Atzmon, A. E. Bair, Terry Alford, D. Chandrasekhar, David Smith, J. W. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Thin heteroepitaxial films of Si 1-x-yGe xC y have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 550 and 700°C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry (ion channeling), secondary-ion-mass-spectrometry and cross-sectional transmission electron microscopy. SiGeC films with up to 2% C were grown at 700°C with good crystallinity and very few interfacial defects, while misfit dislocations at the SiGe/Si interface were observed for SiGe films grown under the same conditions. This difference indicates that the presence of carbon in the SiGe matrix increases the critical thickness of the grown layers. SiGeC thin films (>110 nm) with up to 3.5% C were grown at 550°C with good crystallinity. The crystallinity of the films grown at lower temperature (550°C) was less sensitive to the flow rate of the C source (C 2H 4), which enabled growth of single crystal SiGeC films with higher C content.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995


OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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