Growth of ZnSe on GaAs epitaxial layers in a dual chamber molecular beam epitaxy system

M. C. Tamargo; J. L. De Miguel; R. E. Nahory; B. J. Skromme

doi:10.1117/12.941006

Growth of ZnSe on GaAs epitaxial layers in a dual chamber molecular beam epitaxy system

M. C. Tamargo, J. L. De Miguel, R. E. Nahory, B. J. Skromme

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have grown ZnSe epitaxial layers on GaAs bulk substrates and on GaAs epitaxial layers by molecular beam epitaxy (MBE). A dual chamber MBE system was used which enabled the growth of the GaAs/ZnSe heterostructure completely in-situ. Examination of the initial stages of growth using RHEED indicates a much improved interface when ZnSe is grown over a GaAs epitaxial layer.

Original language	English (US)
Pages (from-to)	115-116
Number of pages	2
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	796
DOIs	https://doi.org/10.1117/12.941006
State	Published - Apr 20 1987
Externally published	Yes
Event	Growth of Compound Semiconductors 1987 - Bay Point, United States Duration: Mar 23 1987 → Mar 27 1987

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{4b7ca15c31674294aac1987411ab335e,

title = "Growth of ZnSe on GaAs epitaxial layers in a dual chamber molecular beam epitaxy system",

abstract = "We have grown ZnSe epitaxial layers on GaAs bulk substrates and on GaAs epitaxial layers by molecular beam epitaxy (MBE). A dual chamber MBE system was used which enabled the growth of the GaAs/ZnSe heterostructure completely in-situ. Examination of the initial stages of growth using RHEED indicates a much improved interface when ZnSe is grown over a GaAs epitaxial layer.",

author = "Tamargo, {M. C.} and {De Miguel}, {J. L.} and Nahory, {R. E.} and Skromme, {B. J.}",

year = "1987",

month = apr,

day = "20",

doi = "10.1117/12.941006",

language = "English (US)",

volume = "796",

pages = "115--116",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Growth of ZnSe on GaAs epitaxial layers in a dual chamber molecular beam epitaxy system

AU - Tamargo, M. C.

AU - De Miguel, J. L.

AU - Nahory, R. E.

AU - Skromme, B. J.

PY - 1987/4/20

Y1 - 1987/4/20

N2 - We have grown ZnSe epitaxial layers on GaAs bulk substrates and on GaAs epitaxial layers by molecular beam epitaxy (MBE). A dual chamber MBE system was used which enabled the growth of the GaAs/ZnSe heterostructure completely in-situ. Examination of the initial stages of growth using RHEED indicates a much improved interface when ZnSe is grown over a GaAs epitaxial layer.

AB - We have grown ZnSe epitaxial layers on GaAs bulk substrates and on GaAs epitaxial layers by molecular beam epitaxy (MBE). A dual chamber MBE system was used which enabled the growth of the GaAs/ZnSe heterostructure completely in-situ. Examination of the initial stages of growth using RHEED indicates a much improved interface when ZnSe is grown over a GaAs epitaxial layer.

UR - http://www.scopus.com/inward/record.url?scp=84958515138&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958515138&partnerID=8YFLogxK

U2 - 10.1117/12.941006

DO - 10.1117/12.941006

M3 - Conference article

AN - SCOPUS:84958515138

SN - 0277-786X

VL - 796

SP - 115

EP - 116

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Growth of Compound Semiconductors 1987

Y2 - 23 March 1987 through 27 March 1987

ER -

Growth of ZnSe on GaAs epitaxial layers in a dual chamber molecular beam epitaxy system

Abstract

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