Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition

D. A. Grützmacher, T. O. Sedgwick, A. Zaslavsky, A. R. Powell, R. A. Kiehl, W. Ziegler, J. Cotte

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


First structural and electrical data are reported for SiGe/Si quantum well structures grown by a new ultra clean low temperature epitaxial deposition process at atmospheric pressure. It is found that the process suppresses the segregation of germanium, possibly by a chemical termination of the surface during the growth. Mutiple-quantum-well structures with controllable well widths and abrupt interfaces have been prepared at temperatures ranging from 550 to 650°C. Magneto-transport measurements of modulation doped quantum wells reveal hole mobilities of 2000 cm2/Vs at 4.2 K at a carrier density of 1.7*1012 cm-2 and a germanium concentration of 18% in the SiGe channel. Resonant tunneling diodes grown by this technique exhibit well resolved regions of negative differential resistance within a very symmetric I-V characteristic.

Original languageEnglish (US)
Pages (from-to)303-308
Number of pages6
JournalJournal of Electronic Materials
Issue number3
StatePublished - Mar 1993
Externally publishedYes


  • Interfaces
  • SiGe quantum wells
  • resonant tunneling diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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