TY - JOUR
T1 - Growth of InN on Ge substrate by molecular beam epitaxy
AU - Trybus, Elaissa
AU - Namkoong, Gon
AU - Henderson, Walter
AU - Doolittle, W. Alan
AU - Liu, Rong
AU - Mei, Jin
AU - Ponce, Fernando
AU - Cheung, Maurice
AU - Chen, Fei
AU - Furis, Madalina
AU - Cartwright, Alexander
PY - 2005/6/1
Y1 - 2005/6/1
N2 - InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.
AB - InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting germanium
KW - B3. Heterojunction semiconductor devices
KW - B3. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2005.02.041
DO - 10.1016/j.jcrysgro.2005.02.041
M3 - Article
AN - SCOPUS:20844452183
SN - 0022-0248
VL - 279
SP - 311
EP - 315
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
ER -