TY - GEN
T1 - Growth of GaAs on Polycrystalline Germanium Substrates Prepared via Aluminum-Induced Crystallization
AU - McClure, Elisabeth L.
AU - Polly, Stephen J.
AU - Chikhalkar, Abhinav
AU - King, Richard
AU - Hubbard, Seth M.
N1 - Funding Information:
The authors would like to acknowledge Dr. Helio Moutinho at NREL for EBSD of the AIC polycrystalline Ge sample. Funding for this work was provided by the Office of Naval Research and the Naval Research Laboratory under contact N00173-14-1-GOll. Funding for conference travel was provided by the IEEE Rochester Section and the RIT Microsystems Engineering department.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - Polycrystalline germanium substrates with an average grain size >600 nm have been achieved on silicon substrates with 500 nm thermally grown silicon dioxide, using a process called aluminum-induced crystallization. Double heterostructures were grown by metal-organic vapor phase epitaxy on these polycrystalline germanium substrates, as well as commercial large-grain polycrystalline germanium substrates and monocrystalline germanium substrate as baselines. Four temperatures were explored for the gallium arsenide nucleation layer in the double heterostructure, with all other growth conditions remaining constant.
AB - Polycrystalline germanium substrates with an average grain size >600 nm have been achieved on silicon substrates with 500 nm thermally grown silicon dioxide, using a process called aluminum-induced crystallization. Double heterostructures were grown by metal-organic vapor phase epitaxy on these polycrystalline germanium substrates, as well as commercial large-grain polycrystalline germanium substrates and monocrystalline germanium substrate as baselines. Four temperatures were explored for the gallium arsenide nucleation layer in the double heterostructure, with all other growth conditions remaining constant.
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U2 - 10.1109/PVSC.2018.8547654
DO - 10.1109/PVSC.2018.8547654
M3 - Conference contribution
AN - SCOPUS:85059884533
T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
SP - 224
EP - 228
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Y2 - 10 June 2018 through 15 June 2018
ER -