Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

S. Tari; R. Sporken; T. Aoki; David Smith; V. Metlushko; K. AbuEl-Rub; S. Sivananthan

doi:10.1116/1.1491992

Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

S. Tari, R. Sporken, T. Aoki, David Smith, V. Metlushko, K. AbuEl-Rub, S. Sivananthan

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Thin, single crystal, epitaxial bcc Fe(001) films were grown on Ge(001) surfaces at 150°C. Fe film growth and interface structure were monitored by RHEED. Fe thin film formation was determined by XPS and HRTEM.

Original language	English (US)
Pages (from-to)	1586-1591
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1491992
State	Published - Jul 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1491992

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Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties. / Tari, S.; Sporken, R.; Aoki, T. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1586-1591.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "Thin, single crystal, epitaxial bcc Fe(001) films were grown on Ge(001) surfaces at 150°C. Fe film growth and interface structure were monitored by RHEED. Fe thin film formation was determined by XPS and HRTEM.",

author = "S. Tari and R. Sporken and T. Aoki and David Smith and V. Metlushko and K. AbuEl-Rub and S. Sivananthan",

year = "2002",

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T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

AU - Tari, S.

AU - Sporken, R.

AU - Aoki, T.

AU - Smith, David

AU - Metlushko, V.

AU - AbuEl-Rub, K.

AU - Sivananthan, S.

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N2 - Thin, single crystal, epitaxial bcc Fe(001) films were grown on Ge(001) surfaces at 150°C. Fe film growth and interface structure were monitored by RHEED. Fe thin film formation was determined by XPS and HRTEM.

AB - Thin, single crystal, epitaxial bcc Fe(001) films were grown on Ge(001) surfaces at 150°C. Fe film growth and interface structure were monitored by RHEED. Fe thin film formation was determined by XPS and HRTEM.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

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