Growth of epitaxial CoSi2 on 6H-SiC(0001)Si

W. Platow, R. J. Nemanich, D. E. Sayers, J. D. Hartman, R. F. Davis

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

Original languageEnglish (US)
Pages (from-to)5924-5927
Number of pages4
JournalJournal of Applied Physics
Issue number12
StatePublished - Dec 15 2001
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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