Growth of bulk AlN and GaN single crystals by sublimation

C. M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, J. F. Muth, I. K. Shmagin, R. Kolbas, Robert Nemanich, R. F. Davis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Scopus citations


Single crystals of AlN to 1 mm thickness were grown in the range 1950-2250°C on 10 × 10 mm 2 α(6H) - SiC(0001) substrates via sublimation-recondensation method. Hot pressed polycrystalline AIN was used as the source material. The color varied from transparent to dark green/blue. The crystal morphology varied with growth conditions. Most crystals were 0.3 mm -1 mm thick transparent layers which completely covered the substrates. Raman, optical and transmission electron microscopy (TEM) results are presented. Single crystals of gallium nitride (GaN) were also grown by subliming powders of this material under an ammonia (NH 3) flow. Optical microscopy, Raman and photoluminescence results are shown.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Number of pages6
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996


OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Growth of bulk AlN and GaN single crystals by sublimation'. Together they form a unique fingerprint.

Cite this