@inproceedings{b0fbd4477559436bb5876621f1af1fed,
title = "Growth and material properties of ZnTe/GaSb heterostructures for optoelectronic device applications",
abstract = "This paper reports the growth of ZnTe/GaSbheterostructures on GaSb (001) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characterize the structural properties. Ellipsometryand photoluminescence (PL) are used to characterize the optical properties.",
keywords = "6.1 {\AA} compound semiconductors, Electron microscopy, Infrared devices, Molecular beam epitaxy, Photoluminescence, X-ray diffraction",
author = "Xinyu Liu and Furdyna, {Jacek K.} and Jin Fan and Lu Ouyang and David Smith and Ding Ding and Yong-Hang Zhang",
year = "2012",
month = oct,
day = "22",
doi = "10.1109/SOPO.2012.6271134",
language = "English (US)",
isbn = "9781457709111",
series = "2012 Symposium on Photonics and Optoelectronics, SOPO 2012",
booktitle = "2012 Symposium on Photonics and Optoelectronics, SOPO 2012",
note = "2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 ; Conference date: 21-05-2012 Through 23-05-2012",
}