Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0 0 1) substrates for electronic and optoelectronic device applications

Engineering & Materials Science

• Epilayers 100%
• Optoelectronic devices 85%
• Materials properties 61%
• Substrates 51%
• High resolution electron microscopy 49%
• Photoluminescence 47%
• Edge dislocations 24%
• Dislocations (crystals) 23%
• Molecular beam epitaxy 22%
• X ray diffraction analysis 18%
• Optical properties 18%
• Tensile strain 18%
• Structural properties 15%
• Thermal expansion 14%
• X ray diffraction 14%
• Semiconductor materials 12%
• Costs 5%

Chemical Compounds

• Optoelectronics 66%
• Edge Dislocation 62%
• Photoluminescence 56%
• Molecular Beam Epitaxy 52%
• Thermal Expansion Coefficient 42%
• X-Ray Diffraction 36%
• Semiconductor 27%
• Optical Property 26%
• Strain 25%
• Application 23%

Physics & Astronomy

• optoelectronic devices 72%
• electronics 38%
• electron microscopy 25%
• photoluminescence 20%
• high resolution 17%
• edge dislocations 16%
• diffraction 15%
• x rays 13%
• thermal expansion 12%
• molecular beam epitaxy 12%
• optical properties 9%
• coefficients 7%