Growth and characterization of ZnO thin films on GaN epilayers

T. P. Smith, H. A. McLean, David J. Smith, P. Q. Miraglia, A. M. Roskowski, R. F. Davis

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O2 were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films.

Original languageEnglish (US)
Pages (from-to)826-832
Number of pages7
JournalJournal of Electronic Materials
Issue number7
StatePublished - Jul 2004
Externally publishedYes


  • Interfacial oxide
  • Metalorganic vapor phase epitaxy
  • Stacking faults
  • Thermal expansion
  • Thin film
  • Threading dislocations
  • Transmission electron microscopy
  • Zinc oxide (ZnO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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