Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

Stacia Keller; Yuvaraj Dora; Srabanti Chowdhury; Feng Wu; Xu Chen; Steven P. Denbaars; James S. Speck; Umesh K. Mishra

doi:10.1002/pssc.201000958

Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. Denbaars, James S. Speck, Umesh K. Mishra

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 112̄. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.

Original language	English (US)
Pages (from-to)	2086-2088
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.201000958
State	Published - Jul 1 2011

Keywords

Gallium nitride
Metal organic chemical vapour deposition
N-polar
Silicon

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201000958

Cite this

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title = "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon",

abstract = "Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 11{\=2}. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.",

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T1 - Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

AU - Keller, Stacia

AU - Dora, Yuvaraj

AU - Chowdhury, Srabanti

AU - Wu, Feng

AU - Chen, Xu

AU - Denbaars, Steven P.

AU - Speck, James S.

AU - Mishra, Umesh K.

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 112̄. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.

AB - Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 112̄. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.

KW - Gallium nitride

KW - Metal organic chemical vapour deposition

KW - N-polar

KW - Silicon

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Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

Abstract

Keywords

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