We have synthesized stoichiometric Ba(Cd 1/3Ta 2/3)O 3 [BCT] (100) dielectric thin films on MgO (100) substrates using Pulsed Laser Deposition. Over 99% of the BCT film was found to be epitaxial [BCT (100) || MgO (100) and BCT (010) || MgO (010)] when grown with an elevated substrate temperature of 635°C, an enhanced oxygen pressure of 53 Pa and a Cd-enriched BCT target with a 1 mol BCT: 1.5 mol CdO composition. A dielectric constant of 32 was inferred from low-frequency capacitance measurements of a planar interdigital metal pattern. Analysis of ultra violet optical absorption results indicates that BCT has a bandgap of 4.9 eV; while the interference pattern in the visible range is consistent with a refractive index of 2.1. Temperature-dependent electrical measurements indicate that the BCT films have a room temperature conductivity of 3 × 10 - 12 Ω - 1 cm - 1 with a thermal activation energy of 0.7 eV. A mean particle size of ∼ 100 nm and a root mean square surface roughness of 5 to 6 nm were measured using Atomic Force Microscopy.

Original languageEnglish (US)
Pages (from-to)6153-6157
Number of pages5
JournalThin Solid Films
Issue number19
StatePublished - Jul 31 2012


  • Ba(Cd1/3Ta2/3)O3
  • Ba(Zn1/3Ta2/3)O3
  • Microwave dielectrics
  • Optical/electrical properties
  • Perovskite
  • Pulsed Laser Deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Growth and characterization of Ba(Cd 1/3Ta 2/3)O 3 thin films'. Together they form a unique fingerprint.

Cite this