An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In0.53Ga0.47As/In 0.52Al0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at VG=0 V.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - Jul 2003
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering