Giant electroresistive ferroelectric diode on 2DEG

Shin Ik Kim, Hyo Jin Gwon, Dai Hong Kim, Seong Keun Kim, Ji Won Choi, Seok Jin Yoon, Hye Jung Chang, Chong Yun Kang, Beomjin Kwon, Chung Wung Bark, Seong Hyeon Hong, Jin Sang Kim, Seung Hyub Baek

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr0.2Ti0.8)O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I- ratio (>108 at ±6 V) and Ion/Ioff ratio (>107). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metalinsulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics.

Original languageEnglish (US)
Article number10548
JournalScientific reports
StatePublished - May 27 2015
Externally publishedYes

ASJC Scopus subject areas

  • General


Dive into the research topics of 'Giant electroresistive ferroelectric diode on 2DEG'. Together they form a unique fingerprint.

Cite this