Abstract
An accurate and general CAD tool for large-signal GaAs MESFET design has been developed. It is based on incorporation of an accurate GaAs MESFET model in the SPICE circuit simulation. This combination allows the analysis of a wide variety of both linear and nonlinear circuits to be performed with a minimum expenditure of programming effort. Because of the physical basis of the device model used, it also enables the designer to optimize the device and circuit simultaneously. This capability makes this tool especially useful in designs involving monolithic technology. The tool has been utilized in the analysis of microwave power amplifiers, oscillators and mixers, and GaAs digital ICs. Examples of some of these studies are presented.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE MTT-S International Microwave Symposium Digest |
| Publisher | IEEE |
| Pages | 417-420 |
| Number of pages | 4 |
| State | Published - 1985 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics