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Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices
Farah E. Mamouni, Sriram K. Dixit, Ronald D. Schrimpf, Philippe C. Adell, Ivan S. Esqueda, Michael L. McLain, Hugh Barnaby, Sorin Cristoloveanu, Weize Xiong
Research output: Contribution to journal › Article › peer-review
43
Scopus
citations