We have used Si MOSFET's to study the variation of the channel Hall mobility and noise temperature with the gate voltage. From the Hall mobility measurements, a new empirical expression is found to describe the mobility degradation with gate voltage over a wide range of transverse electric field. By measuring the thermal noise, it is found that the channel carriers appear to be heated by the gate electric field and that the excess noise temperature varies quadratically with gate field.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering