TY - JOUR
T1 - GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers
AU - Yu, S. Q.
AU - Cao, Yu
AU - Johnson, Shane
AU - Zhang, Y. H.
AU - Huang, Y. Z.
PY - 2008
Y1 - 2008
N2 - Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 μm cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 μm and a longitudinal mode separation of 100 nm. This mode has a quality factor (∼2× 105) that is much larger than the first (∼5× 104) and second (∼3× 104) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSbAlGaAsSbGaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 μm emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA.
AB - Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 μm cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 μm and a longitudinal mode separation of 100 nm. This mode has a quality factor (∼2× 105) that is much larger than the first (∼5× 104) and second (∼3× 104) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSbAlGaAsSbGaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 μm emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA.
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U2 - 10.1116/1.2819260
DO - 10.1116/1.2819260
M3 - Article
AN - SCOPUS:38849108271
SN - 1071-1023
VL - 26
SP - 56
EP - 61
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 1
ER -