Gas source molecular epitaxy of Ge_1-ySn_ymaterials and devices using high order Ge₄H₁₀and Ge₅H₁₂hydrides

Engineering & Materials Science

• Epitaxial growth 100%
• Chemical vapor deposition 55%
• Gases 40%
• Ellipsometry 40%
• Infrared devices 39%
• Rapid thermal annealing 36%
• Fabrication 35%
• Buffer layers 33%
• Substrates 33%
• Hydrides 29%
• Direct injection 26%
• Film thickness 25%
• Crystalline materials 24%
• Transparency 24%
• Transmission electron microscopy 24%
• Crystals 23%
• Hot Temperature 22%
• Vapors 21%
• Fluxes 19%
• Lighting 19%
• Chemical analysis 15%
• Temperature 9%
• Experiments 8%

Physics & Astronomy

• epitaxy 70%
• gases 36%
• vapor deposition 27%
• molecular flow 26%
• fabrication 21%
• cryogenic temperature 19%
• hydrides 18%
• format 17%
• ellipsometry 17%
• chemistry 15%
• buffers 15%
• film thickness 14%
• prototypes 14%
• breakdown 13%
• atomic force microscopy 13%
• illumination 13%
• vapors 13%
• wafers 13%
• injection 13%
• transmission electron microscopy 11%
• crystals 8%

Chemical Compounds

• Epitaxial Growth 86%
• Strain 49%
• Gas 37%
• Transparency 23%
• Illumination 21%
• Hydride 20%
• Buffer Solution 15%
• Flow 15%
• Pressure 13%
• Purity 12%
• Liquid Film 11%
• Surface 7%
• Application 7%