GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications

Kai Fu; Shisong Luo; Houqiang Fu; Kevin Hatch; Shanthan Reddy Alugubelli; Hanxiao Liu; Tao Li; Mingfei Xu; Zhaobo Mei; Ziyi He; Jingan Zhou; Cheng Chang; Fernando A. Ponce; Robert Nemanich; Yuji Zhao

doi:10.1109/TED.2023.3321562

GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications

Kai Fu, Shisong Luo, Houqiang Fu, Kevin Hatch, Shanthan Reddy Alugubelli, Hanxiao Liu, Tao Li, Mingfei Xu, Zhaobo Mei, Ziyi He, Jingan Zhou, Cheng Chang, Fernando A. Ponce, Robert Nemanich, Yuji Zhao

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We demonstrate threshold switching behaviors with working temperatures up to 500 °C based on GaN vertical p-n diodes, and these devices survived a passive test in a simulated Venus environment (460 °C, 94 bar, CO2 gas flow) for ten days. This is realized via interface engineering through an etch-then-regrow process combination with a Ga2O3 interlayer. It is hypothesized the traps in the interfacial layer can form/rupture a conductive path by trapping/detrapping electrons/holes, which are responsible for the observed threshold switching behaviors. To the best of our knowledge, this is the first demonstration of two-terminal threshold-switching memory devices under such high temperatures. These results can serve as a critical reference for the future development of GaN-based memory devices for harsh environment applications.

Original language	English (US)
Pages (from-to)	1641-1645
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	3
DOIs	https://doi.org/10.1109/TED.2023.3321562
State	Published - Mar 1 2024

Keywords

Ga2O3
GaN
Venus
harsh environment
high temperature
interface engineering
memory
p-n diodes
threshold switching
wide bandgap semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2023.3321562

Cite this

Fu, K., Luo, S., Fu, H., Hatch, K., Alugubelli, S. R., Liu, H., Li, T., Xu, M., Mei, Z., He, Z., Zhou, J., Chang, C., Ponce, F. A., Nemanich, R., & Zhao, Y. (2024). GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications. IEEE Transactions on Electron Devices, 71(3), 1641-1645. https://doi.org/10.1109/TED.2023.3321562

Fu, K, Luo, S, Fu, H, Hatch, K, Alugubelli, SR, Liu, H, Li, T, Xu, M, Mei, Z, He, Z, Zhou, J, Chang, C, Ponce, FA , Nemanich, R & Zhao, Y 2024, 'GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications', IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1641-1645. https://doi.org/10.1109/TED.2023.3321562

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abstract = "We demonstrate threshold switching behaviors with working temperatures up to 500 °C based on GaN vertical p-n diodes, and these devices survived a passive test in a simulated Venus environment (460 °C, 94 bar, CO2 gas flow) for ten days. This is realized via interface engineering through an etch-then-regrow process combination with a Ga2O3 interlayer. It is hypothesized the traps in the interfacial layer can form/rupture a conductive path by trapping/detrapping electrons/holes, which are responsible for the observed threshold switching behaviors. To the best of our knowledge, this is the first demonstration of two-terminal threshold-switching memory devices under such high temperatures. These results can serve as a critical reference for the future development of GaN-based memory devices for harsh environment applications.",

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author = "Kai Fu and Shisong Luo and Houqiang Fu and Kevin Hatch and Alugubelli, {Shanthan Reddy} and Hanxiao Liu and Tao Li and Mingfei Xu and Zhaobo Mei and Ziyi He and Jingan Zhou and Cheng Chang and Ponce, {Fernando A.} and Robert Nemanich and Yuji Zhao",

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AU - Hatch, Kevin

AU - Alugubelli, Shanthan Reddy

AU - Liu, Hanxiao

AU - Li, Tao

AU - Xu, Mingfei

AU - Mei, Zhaobo

AU - He, Ziyi

AU - Zhou, Jingan

AU - Chang, Cheng

AU - Ponce, Fernando A.

AU - Nemanich, Robert

AU - Zhao, Yuji

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N2 - We demonstrate threshold switching behaviors with working temperatures up to 500 °C based on GaN vertical p-n diodes, and these devices survived a passive test in a simulated Venus environment (460 °C, 94 bar, CO2 gas flow) for ten days. This is realized via interface engineering through an etch-then-regrow process combination with a Ga2O3 interlayer. It is hypothesized the traps in the interfacial layer can form/rupture a conductive path by trapping/detrapping electrons/holes, which are responsible for the observed threshold switching behaviors. To the best of our knowledge, this is the first demonstration of two-terminal threshold-switching memory devices under such high temperatures. These results can serve as a critical reference for the future development of GaN-based memory devices for harsh environment applications.

AB - We demonstrate threshold switching behaviors with working temperatures up to 500 °C based on GaN vertical p-n diodes, and these devices survived a passive test in a simulated Venus environment (460 °C, 94 bar, CO2 gas flow) for ten days. This is realized via interface engineering through an etch-then-regrow process combination with a Ga2O3 interlayer. It is hypothesized the traps in the interfacial layer can form/rupture a conductive path by trapping/detrapping electrons/holes, which are responsible for the observed threshold switching behaviors. To the best of our knowledge, this is the first demonstration of two-terminal threshold-switching memory devices under such high temperatures. These results can serve as a critical reference for the future development of GaN-based memory devices for harsh environment applications.

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GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications

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