GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

Melissa J. Archer, Daniel C. Law, Shoghig Mesropian, Andreea Boca, Moran Haddad, Corinne Ladous, Richard R. King, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


In this study, we report synthesis of large area (≫ 2 cm2) crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I-V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates.

Original languageEnglish (US)
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
StatePublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country/TerritoryUnited States
CitySan Diego, CA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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