TY - GEN
T1 - Fundamentals and applications of selenium-passivated Si(100) surface
AU - Tao, M.
PY - 2006/1/1
Y1 - 2006/1/1
N2 - Surface states have been one of the fundamental problems in semiconductor technology since the Bardeen era. It is found that a Si(100) surface passivated with a monolayer of selenium can significantly reduce surface states. A number of applications are envisioned for this atomically-engineered surface, including low-resistance ohmic contacts for Si microelectronics, photovoltaics, and high-temperature electronics, interface engineering between high-k dielectrics and Si(100) for Si nanoelectronics, and suppression of surface recombination for Si photovoltaics. Experimental results for some of diese applications are presented.
AB - Surface states have been one of the fundamental problems in semiconductor technology since the Bardeen era. It is found that a Si(100) surface passivated with a monolayer of selenium can significantly reduce surface states. A number of applications are envisioned for this atomically-engineered surface, including low-resistance ohmic contacts for Si microelectronics, photovoltaics, and high-temperature electronics, interface engineering between high-k dielectrics and Si(100) for Si nanoelectronics, and suppression of surface recombination for Si photovoltaics. Experimental results for some of diese applications are presented.
UR - http://www.scopus.com/inward/record.url?scp=34547256986&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547256986&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2006.306300
DO - 10.1109/ICSICT.2006.306300
M3 - Conference contribution
AN - SCOPUS:34547256986
SN - 1424401615
SN - 9781424401611
T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 458
EP - 461
BT - ICSICT-2006
PB - IEEE Computer Society
T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Y2 - 23 October 2006 through 26 October 2006
ER -