TY - JOUR
T1 - Full-band CA/Monte Carlo modeling of ultrasmall FETs
AU - Wigger, S. J.
AU - Goodnick, Stephen
AU - Saraniti, Marco
N1 - Funding Information:
Acknowledgements—The authors would like to thank Dragica Vasileska for all her assistance. The authors would also like to acknowledge the support of this research by the National Science Foundation Grant ECS-9976484.
PY - 2000/5
Y1 - 2000/5
N2 - The modeling of ultra-small MOSFETs is presented using a newly developed full-band, hybrid ensemble Monte Carlo (EMC)-cellular automata (CA) device simulator. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory-consuming CA method and the slower EMC method. In order to efficiently model 3D ultra-small FETs, the hybrid algorithm is coupled self-consistently with a 2D and 3D multi-grid Poisson solver.
AB - The modeling of ultra-small MOSFETs is presented using a newly developed full-band, hybrid ensemble Monte Carlo (EMC)-cellular automata (CA) device simulator. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory-consuming CA method and the slower EMC method. In order to efficiently model 3D ultra-small FETs, the hybrid algorithm is coupled self-consistently with a 2D and 3D multi-grid Poisson solver.
UR - http://www.scopus.com/inward/record.url?scp=0034187432&partnerID=8YFLogxK
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U2 - 10.1006/spmi.2000.0860
DO - 10.1006/spmi.2000.0860
M3 - Conference article
AN - SCOPUS:0034187432
SN - 0749-6036
VL - 27
SP - 417
EP - 420
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
IS - 5
T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)
Y2 - 6 December 1999 through 10 December 1999
ER -