Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo

S. Yamakawa, Stephen Goodnick, J. Branlard, Marco Saraniti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


A full-band electron transport calculation in wurtzite phase GaN based on a detailed model of the electron-phonon interactions using a Cellular Monte Carlo (CMC) approach is applied to the frequency analysis of MESFETs. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scattering is included in the full-band CMC simulator, which shows good agreement with measured velocity-field data. The effect of the dislocation scattering on the MESFET RF characteristics is examined as well, indicating that the computed cut-off frequency is affected by the crystal dislocation density and bias conditions.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Number of pages4
StatePublished - 2005

ASJC Scopus subject areas

  • Condensed Matter Physics


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