Abstract
The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic current-voltage characteristics of GaAs MESFET structures. The full-band particle-based simulator is also applied to a novel dual-gate GaAs MESFET structure.
Original language | English (US) |
---|---|
Pages (from-to) | 213-217 |
Number of pages | 5 |
Journal | Journal of Computational Electronics |
Volume | 2 |
Issue number | 2-4 |
DOIs | |
State | Published - Dec 1 2003 |
Keywords
- 3D particle-based simulation
- GaAs MESFET
- dual gate structures
- frequency analysis
- full-band
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering