Abstract
Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH 3 at temperatures between 400-700 °C for various times. Upon annealing Ti segregates to the surface and alloy/SiO 2 interface to form a TiN(O) surface layer and a TiO/Ti 5Si 3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | S. Coffa, A. Polman, R.N. Schwartz |
Publisher | Materials Research Society |
Pages | 337-342 |
Number of pages | 6 |
Volume | 427 |
State | Published - 1996 |
Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |
Other
Other | Proceedings of the 1996 MRS Spring Symposium |
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City | San Francisco, CA, USA |
Period | 4/8/96 → 4/12/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials