Formation and kinetics of ion-induced yttrium silicide layers

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6 Scopus citations


Yttrium layers on amorphous or crystalline silicon substrates were irradiated with 600 keV Ar++, Kr++, and Xe++ ions between liquid-nitrogen temperatures and 265°C. Ion-induced YSi 1.7 formed in those samples irradiated above 205°C and fluence ≥1×1015 ions/cm2. The growth rates were monitored as a function of fluence and nuclear energy deposition at the Y/Si interface. For each ions species investigated, the growth rate varied linearly with the square root of fluence. The apparent activation energy was determined to be 0.6±0.1 eV. The experimental growth rates also exhibited a linear dependence on the nuclear energy deposition. This finding agrees qualitatively with the premise of nonoverlapping subcascades.

Original languageEnglish (US)
Pages (from-to)1010-1014
Number of pages5
JournalJournal of Applied Physics
Issue number3
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • General Physics and Astronomy


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