Abstract
Fluctuation microscopy is a new technique to study medium-range structure in disordered materials. Low-resolution dark-field transmission electron microscope images are interpreted as spatially resolved diffraction maps. Statistical analysis of intensity variations in these maps provides information about higher-order atom position correlation functions. Here we give a qualitative description of the technique and explore the properties and utility of higher-order correlation functions in describing the structure of disordered materials.
Original language | English (US) |
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Pages (from-to) | 259-266 |
Number of pages | 8 |
Journal | Journal of Electron Microscopy |
Volume | 49 |
Issue number | 2 |
DOIs | |
State | Published - 2000 |
Externally published | Yes |
Keywords
- Amorphous semiconductors
- Disordered materials
- Fluctuation microscopy
- Medium-range order
- Quantitative microscopy
ASJC Scopus subject areas
- Instrumentation