Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Hannu S. Laine, Ville Vahanissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, Sebastian Husein, Barry Lai, Mariana Bertoni, Djoudi Bouhafs, Tonio Buonassisi, David P. Fenning, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Electronic)9781509027248
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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