TY - GEN
T1 - Finite- vs. infinite-source emitters in silicon photovoltaics
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
AU - Laine, Hannu S.
AU - Vahanissi, Ville
AU - Liu, Zhengjun
AU - Huang, Haibing
AU - Magana, Ernesto
AU - Morishige, Ashley E.
AU - Khelifati, Nabil
AU - Husein, Sebastian
AU - Lai, Barry
AU - Bertoni, Mariana
AU - Bouhafs, Djoudi
AU - Buonassisi, Tonio
AU - Fenning, David P.
AU - Savin, Hele
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
AB - Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
UR - http://www.scopus.com/inward/record.url?scp=85003587647&partnerID=8YFLogxK
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U2 - 10.1109/PVSC.2016.7749686
DO - 10.1109/PVSC.2016.7749686
M3 - Conference contribution
AN - SCOPUS:85003587647
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 678
EP - 680
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 5 June 2016 through 10 June 2016
ER -